① The foundation for high-quality, high refractive index contrast silicon-based SiOx integrated optical waveguide materials remains weak.

There are two main methods for growing silicon-based SiOx integrated optical waveguide materials abroad: the plasma-enhanced chemical vapor deposition (PECVD) method, mainly used in Europe and the United States, and the flame hydrolysis deposition (FHD) method, mainly used in Japan and South Korea.

The PECVD method offers high precision and good controllability, while the FHD method features a fast growth rate and higher industrial efficiency. Each has its own advantages and disadvantages; however, there is a lack of relevant applied fundamental research domestically.

② The chip fabrication process level does not yet meet the requirements for industrialization, particularly in terms of full-wafer uniformity and stability, such as high aspect ratio and low-loss etching processes for thick silicon dioxide films.

③ In terms of industrial and market orientation, there has historically been a tendency to rely on purchasing and exchanging market access for technology.

④ Previously, domestic R&D capabilities were relatively weak, resulting in a significant portion of high-end optical chips still relying on imports.

⑤ It is necessary to comprehensively master and integrate multiple technologies, including epitaxy, micro/nano fabrication, packaging, and reliability engineering, making this a technology-intensive industry.